Monolithic integrated semiconductor diode arrangement

Details Monolithic integrated semiconductor diode arrangement Monolithic integrated semiconductor diode arrangement

1978-04-26

1981-02-03

Clawson, Jr., Joseph E.

357 20, 357 39, 357 52, 357 86, H01L 2900

Patent

active

042491924

ABSTRACT:
A semiconductor diode for use in a double plug glass housing is formed in a planar arrangement having two transistor structures, one of which is diode-connected by connecting the base to the collector, and the other of which has no emitter region. Both transistors being connected in parallel with a common collector region and one transistor structure surrounds the other.

REFERENCES:
patent: 3878551 (1975-04-01), Callahan
patent: 4017882 (1977-04-01), Kannam et al.

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