Monolithic integrated semiconductor circuit

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357 43, 357 45, 357 48, 357 92, H01L 2972

Patent

active

041308263

ABSTRACT:
A monolithic integrated semiconductor circuit including a plurality of low on-state resistance vertical bipolar switching transistors for connecting a series of input lines, as desired, to one or more output lines wherein each of said switching transistors comprises a substrate region of a first type of conductivity having a first layer thereon of the second type of conductivity, a second layer on the first layer and of the second type of conductivity but with a lower doping than the first layer, a third layer of the first type of conductivity in the second layer, a fourth layer of the second type of conductivity in the third layer, a tank like structure formed from the first layer and a region encircling the second third and fourth layers and of the second type of conductivity, a first frame like region of the second type of conductivity encircling the tank like structure, a second frame like region encircling the first frame like region and being of the first type of conductivity and in contact with the substrate region, and connections for the tank like structure, the substrate region and the third and fourth layers.

REFERENCES:
patent: 4027324 (1977-05-01), Yagi et al.
patent: 4032958 (1977-06-01), Yagi et al.

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