Monolithic integrated planar semiconductor system and process fo

Details Monolithic integrated planar semiconductor system and process fo Monolithic integrated planar semiconductor system and process fo

1987-10-06

1990-04-10

Wojciechowicz, Edward J.

357 28, 357 46, 357 14, 357 34, 357 51, H01L 2990

Patent

active

049164945

ABSTRACT:
A monolithic integrated semiconductor device is described, wherein for the adjustment of the breakdown voltage a cover electrode (7) is disposed in the area of the pn-junctions and a corresponding potential is applied through a voltage divider (1) for adjusting the breakdown voltage. For maintaining a temperature independent breakdown voltage it is provided that the voltage divider (1) consists of resistors (R1, R2) in the form of diffused zones which have different doping levels. The resulting different temperature coefficients of the resistors (R1,R2) of the voltage divider cause a temperature dependent potential change of the cover electrode potential, whereby a temperature stabilization of the breakdown voltage is obtained.

REFERENCES:
patent: 4258311 (1981-03-01), Tokuda et al.
patent: 4618875 (1986-10-01), Flohrs

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