Monolithic integrated optoelectronic semiconductor component and

Details Monolithic integrated optoelectronic semiconductor component and Monolithic integrated optoelectronic semiconductor component and

1997-02-14

1999-03-30

Healy, Brian

Optical waveguides

Integrated optical circuit

385 15, 385 31, 385 43, 385 45, 385130, 385131, 437 51, 437165, G02B 612, H01L 2170

Patent

active

058899022

ABSTRACT:
An integrated optoelectronic semiconductor component is presented, which can equally process light signals of any polarization direction. Such semiconductor components are used for digital optical telecommunications. The semiconductor component has active (A) and passive (B) waveguide sections, which comprise a number of semiconductor layers (SP) with so-called multiple quantum well structures. The semiconductor layers (SP) are deposited by a process known as selective area growth (SAG). A portion of the semiconductor layers has a lattice constant which is smaller than the lattice constant of a substrate (SUB). This creates a biaxial tensile strain in these layers. The tensile strain is optimized in the active waveguide sections (A) to attain polarization independence. Furthermore a process is described whereby such a semiconductor component can be manufactured.

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