Semiconductor device manufacturing: process – Forming schottky junction – Compound semiconductor
Reexamination Certificate
2005-10-11
2010-02-02
Nguyen, Dao H (Department: 2818)
Semiconductor device manufacturing: process
Forming schottky junction
Compound semiconductor
C438S167000, C438S172000, C438S570000, C438S572000, C438S573000, C257S155000, C257S191000, C257S192000, C257SE27068, C257SE29041
Reexamination Certificate
active
07655546
ABSTRACT:
A depletion mode (D-mode) field effect transistor (FET) is monolithically integrated with an enhancement mode (E-mode) FET in a multi-layer structure. The multi-layer structure includes a channel layer overlaid by a barrier layer overlaid by an ohmic contact layer. Source and drain contacts of the D-mode and E-mode FETs are coupled to the ohmic contact layer. A gate contact of the D-mode and E-mode FETs is coupled to the barrier layer. An amorphized region is provided beneath the E-mode gate contact within the barrier layer. The amorphized region forms a buried E-mode Schottky contact with the barrier layer. An alternative embodiment couples the gate contact of the D-mode transistor to a first layer that overlies the barrier layer, and provides a similar D-mode amorphized region within the first layer.
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Bever Hoffman & Harms LLP
Nguyen Dao H
TriQuint Semiconductor Inc.
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