Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2003-11-24
2008-11-11
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S155000, C257S195000, C257S392000, C257SE21047, C257SE21631
Reexamination Certificate
active
07449728
ABSTRACT:
A depletion mode (D-mode) field effect transistor (FET) is monolithically integrated with an enhancement mode (E-mode) FET in a multi-layer structure. The multi-layer structure includes a channel layer overlaid by a barrier layer overlaid by an ohmic contact layer. Source and drain contacts of the D-mode and E-mode FETs are coupled to the ohmic contact layer. A gate contact of the D-mode and E-mode FETs is coupled to the barrier layer. An amorphized region is provided beneath the E-mode gate contact within the barrier layer. The amorphized region forms a buried E-mode Schottky contact with the barrier layer. An alternative embodiment couples the gate contact of the D-mode transistor to a first layer that overlies the barrier layer, and provides a similar D-mode amorphized region within the first layer.
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Bever Hoffman & Harms
Nguyen Dao H
Tri Quint Semiconductor, Inc.
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