Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-03-29
2011-03-29
Dickey, Thomas L (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257SE23020, C257SE31001, C257SE31127, C438S048000
Reexamination Certificate
active
07915700
ABSTRACT:
Provided is a monolithic integrated composite device including: a silicon substrate which is partitioned into a silicon integrated circuit forming region and a silicon optical device forming region; a buried oxide layer which is formed locally in the silicon substrate of the silicon optical device forming region and isolates unit devices of the silicon optical device forming region; an overlay layer formed locally on the buried oxide layer; a silicon optical device formed in the silicon optical device forming region using the silicon overlay layer; a silicon integrated circuit formed in the silicon integrated circuit forming region of the silicon substrate; and wiring connecting the silicon integrated circuit and the silicon optical device or connecting the silicon optical devices or connecting the silicon integrated circuits.
REFERENCES:
patent: 5665613 (1997-09-01), Nakashima et al.
patent: 6916673 (2005-07-01), Sieben et al.
patent: 6993236 (2006-01-01), Gunn, III et al.
patent: 7085443 (2006-08-01), Gunn et al.
patent: 2003/0142943 (2003-07-01), Yegnanarayanan et al.
patent: 2004/0081385 (2004-04-01), Karnacewicz et al.
patent: 2005/0208694 (2005-09-01), Yue et al.
patent: 1020050043137 (2005-05-01), None
patent: WO 2005/020307 (2005-03-01), None
Tejaswi Indukuri et al., “Subterranean silicon photonics: Demonstration of buried waveguide-coupled microresonators,” Appl. Phys. Lett. 87, 081114 (2005).
G. K. Celler, “Frontiers of silicon-on-insulator,” pp. 4955-4978, J. Appl. Phys. vol. 93, No. 9, May 1, 2003.
International Search Report for application PCT/KR2007/001617 filed Apr. 3, 2007.
Written Opinion of the International Searching Authority for application PCT/KR2007/001617 filed Apr. 3, 2007.
Kim Gyungock
Suh Dong-woo
Dickey Thomas L
Electronics and Telecommunications Research Institute
Yushin Nikolay
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