Monolithic integrated circuit transistor having very low collect

Details Monolithic integrated circuit transistor having very low collect Monolithic integrated circuit transistor having very low collect

1977-04-21

1978-08-29

Wojciechowicz, Edward J.

357 34, 357 40, 357 44, H01L 2704

Patent

active

041107829

ABSTRACT:
A monolithic integrated circuit incudes a vertical transistor having a low collector resistance with high current handling ability. The integrated circuit comprises a P type epitaxial layer grown on an N type substrate with both deep and shallow N type diffusions made into the P type layer. In the high current vertical transistor region with the deep N type diffusion, the deep diffusion penetrates the P layer to the N type substrate, whereas in the other transistor the shallow diffusion does not penetrate to the substrate. An N epitaxial layer is grown on the P type layer and thereafter normal processing techniques are used to form the base and emitter regions for the devices including the high current transistor which has its collector electrically coupled to the substrate.

REFERENCES:
patent: 3767486 (1973-10-01), Imaizumi
patent: 3912555 (1975-10-01), Tsuyuki

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