Patent
1980-04-14
1981-07-14
Clawson, Jr., Joseph E.
357 40, 357 76, H01L 2948
Patent
active
042789850
ABSTRACT:
Monolithic integrated circuit structure incorporating a full wave diode bridge rectifier of four Schottky diodes. A body of silicon includes four zones of N-type material. The first and second N-type zones are separated from each other by encircling and intervening P-type material. A third and fourth N-type zones are contiguous. A Schottky barrier is formed adjacent to the surface of each zone by a layer of a mixed silicide of deposited titanium and tungsten. A first conductive member is connected to the N-type material of the first zone and the silicide layer of the third zone. A second conductive member is connected to the N-type material of the second zone and the silicide layer of the fourth zone. A third conductive member is connected in common to the silicide layers on the first and second zones. A fourth conductive member is connected to the N-type material of the third and fourth zones. An AC voltage applied across the first and second conductive members produces a DC voltage across the third and fourth conductive members.
REFERENCES:
patent: 3235779 (1966-02-01), Zacharellis
patent: 3638079 (1972-01-01), Chan
patent: 3673468 (1972-06-01), Schafer
patent: 3995174 (1976-11-01), Zrudsky
patent: 4174541 (1979-11-01), Schmitz
patent: 4199775 (1980-04-01), Agraz-Guerena et al.
Clawson Jr. Joseph E.
GTE Laboratories Incorporated
Keay David M.
LandOfFree
Monolithic integrated circuit structure incorporating Schottky c does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Monolithic integrated circuit structure incorporating Schottky c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Monolithic integrated circuit structure incorporating Schottky c will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2167452