Monolithic integrated circuit of a field-effect...

Details Monolithic integrated circuit of a field-effect... Monolithic integrated circuit of a field-effect...

2011-08-16

2011-08-16

Sandvik, Benjamin P (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257SE29246

Reexamination Certificate

active

07999289

ABSTRACT:
A field-effect semiconductor device such as a HEMT or MESFET is monolithically integrated with a Schottky diode for feedback, regeneration, or protection purposes. The field-effect semiconductor device includes a main semiconductor region having formed thereon a source, a drain, and a gate between the source and the drain. Also formed on the main semiconductor region, preferably between gate and drain, is a Schottky electrode electrically coupled to the source. The Schottky electrode provides a Schottky diode in combination with the main semiconductor region. A current flow is assured from Schottky electrode to drain without interruption by a depletion region expanding from the gate.

REFERENCES:
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patent: 2007/0120153 (2007-05-01), Williams et al.
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patent: 2003-229566 (2003-08-01), None
patent: 2005-158889 (2005-06-01), None

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