Monolithic integrated circuit having enhancement...

Details Monolithic integrated circuit having enhancement... Monolithic integrated circuit having enhancement...

2005-02-04

2009-12-01

Gurley, Lynne A. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257SE21407, C257SE27061

Reexamination Certificate

active

07626218

ABSTRACT:
A semiconductor structure having: a III-V substrate structure; an enhancement mode transistor device disposed in a first region of the structure; a depletion mode transistor device disposed in a laterally displaced second region of the structure; and a RF/microwave/milli-meter wave transistor device formed in a laterally displaced third region thereof.

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Ellen Lan et al., “A Field Plate Device by Self-Aligned Spacer Process”, Motorola Inc., Microwave and Mixed Signal Technologies Lab, Tempe, AZ, 4 pgs. The International Conference on Compound Semiconductor Manufacturing Technology, 2004.
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