Monolithic integrated circuit having compound semiconductor laye

Details Monolithic integrated circuit having compound semiconductor laye Monolithic integrated circuit having compound semiconductor laye

1990-04-20

1992-11-17

Kunemund, Robert

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

505703, 505704, 437 84, 437108, 437126, 437976, 148DIG25, 148DIG72, 148DIG97, H01L 2120

Patent

active

051643596

ABSTRACT:
A semiconductor device and processing technique is provided for monolithic integration of a single crystal compound element semiconductor on a ceramic substrate. A high resistivity semi-insulating buffer layer is epitaxially grown on the ceramic substrate and has an elastically transitional lattice constant matching at its lower surface the lattice constant of the ceramic substrate, and matching at its upper surface the lattice constant of the semiconductor layer.

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