Monolithic integrated circuit device having microwave power ampl

Details Monolithic integrated circuit device having microwave power ampl Monolithic integrated circuit device having microwave power ampl

1995-09-06

1996-11-12

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330286, 330307, H03F 3193, H03F 3195

Patent

active

055744028

ABSTRACT:
A microwave multi-stage power amplifier has matching circuits for input and output stages and one or more inter-stage matching circuits. The amplifier and a signal output pad and first and second voltage supply pads are formed at one and the same semi-insulating substrate. A first FET in the output stage has its drain connected to the first voltage supply pad through a first distributed line and further connected to the signal output pad through a second distributed line in which the first and second distributed lines contribute to formation of the matching circuit for the output stage. A second FET in a stage preceding to the output stage has its drain connected to the second voltage supply pad through a third distributed line serving as a connection conductor. The first distributed line has a width larger than that of the third distributed line and has a length which limits an impedance seen at the drain of the output stage FET towards the first voltage supply pad at an operation frequency of the amplifier to a value other than infinity.

REFERENCES:
patent: 4771247 (1988-09-01), Jacomb-Hood
The Technical Report of IEIC, May 29, 1984, pp. 1-7.
1994 Spring Meeting C-110 of IEIC, p. 2-615.
1994 Spring Meeting C-107 of IEIC, p. 2-612.

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