Monolithic integrated bridge transistor circuit and correspondin

Details Monolithic integrated bridge transistor circuit and correspondin Monolithic integrated bridge transistor circuit and correspondin

1993-09-20

1995-11-07

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257141, 257378, 363132, H01L 2910

Patent

active

054649935

ABSTRACT:
A monolithically integrated, transistor bridge circuit of a type suiting power applications, comprises at least one pair of IGBT transistors (M1,M2) together with vertically-conducting bipolar junction transistors transistors (T1,T2). These IGBT transistors are laterally conducting, having drain terminals (9,19) formed on the surface of the integrated circuit (1), and through such terminals, they are connected to another pair of transistors (T1,T2) of the bipolar type.

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patent: 5023691 (1991-06-01), Hagino
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patent: 5231563 (1993-07-01), Jitaru
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patent: 5317180 (1994-05-01), Hutter et al.
"Power losses of the cascode connection compared to a single common-emitter bipolar transistor," Nov. 1981, Electronic Engineering, p. 67.
3rd International Symposium on Power Semiconductor Devices, and ICS April 22, 1991, Maryland USA/Miyazaki etc. "A Novel High Voltage 3-Phase Monolithic Inverter IC" pp. 248-253.

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