Coherent light generators – Particular active media – Semiconductor
Patent
1981-07-01
1983-02-01
Ozaki, G.
Coherent light generators
Particular active media
Semiconductor
29569L, 148171, H01S 319, H01L 21208
Patent
active
043719686
ABSTRACT:
A monolithic laser optical cavity structure and method of forming by use of planar photolithographic and crystal regrowth techniques. An original growth multilayer double heterostructure laser structure is grown by LPE on a N+-GaAs substrate. V-grooves are then etched in the epitaxial layers down through the optical cavity by photolithographic techniques. GaAlAs is grown in the V-grooves by crystal regrowth techniques up to the original surface of the laser wafer thus isolating the lasers from each other. The lasers are then separated to form laser arrays.
REFERENCES:
patent: 4033796 (1977-07-01), Burnham et al.
patent: 4122407 (1978-10-01), Van Vechten
patent: 4188244 (1980-02-01), Itoh et al.
patent: 4213805 (1980-07-01), Tsukada
patent: 4251298 (1981-02-01), Thompson
Blum et al., IBM T.D.B., vol. 15, No. 7, Dec. 1972, p. 2345.
Burnham et al., Xerox Disclosure Journal, vol. 4, No. 3, May-Jun. 1979, pp. 57 and 358.
Miller James E.
Trussell, Jr. C. Ward
Edelberg Nathan
Harwell Max L.
Lee Milton W.
Ozaki G.
The United States of America as represented by the Secretary of
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