Monolithic infrared focal plane charge coupled device imager

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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357 15, 357 16, 357 24, 357 30, 357 61, G11C 1928, H01L 2978, H01L 2714, H01L 2956

Patent

active

042283655

ABSTRACT:
An infrared (IR) detector device comprised of a solid state, radiation ha and high resolution monolithic IR focal plane array for imaging applications. The monolithic IR focal plane array has a heterostructure injection scheme that prevents charge coupled device (CCD) "well filling" by using a heterojunction barrier between the absorber, or detector layer, and the transfer layer. Injection of signal charge into a CCD multiplexer is controlled by establishing a punch through condition between the absorber layer and the CCD channel. The detector layer and the CCD multiplexer are on different planes of the focal plane array.

REFERENCES:
patent: 4032952 (1977-06-01), Ohba et al.
patent: 4142198 (1978-02-01), Finnila et al.

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