Monolithic infrared detector with pyroelectric material

Radiant energy – Invisible radiant energy responsive electric signalling – Infrared responsive

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H01L 2714

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active

052834387

ABSTRACT:
Infrared detectors whose detecting part consists of a layer of pyroelectric material deposited on a semiconductive substrate are disclosed. The object is to facilitate the polarization of the layer of pyroelectric material after it is deposited on the semiconductive substrate. The detector of the invention includes a semiconductive substrate (15) carrying a layer of pyroelectric material (11) in which are defined zones, each corresponding to a pixel (P1 to P9). Each pyroelectric zone is defined by an electrode known as lower electrode (EI 1 to EI 9), in contact with a face of pyroelectric layer (11) oriented toward substrate (15). According to a characteristic of the invention, a diode known as polarization diode (DP) is formed in substrate (15) for each pixel (P1 to P9). The polarization diode is connected to lower electrode (EI 1 to EI 9) to make possible the passage of a current between substrate (15) and the lower electrode.

REFERENCES:
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patent: 4024560 (1977-05-01), Miller et al.
patent: 5087816 (1992-02-01), Robin et al.
Ferroelectrics, vol. 91, 1989, U.S. pp. 127-139; M. Okuyama et al.: `Pyroelectric IR-CCD image sensor`.
SPIE, Infrared Detectors and Arrays, vol. 930, 1988 pp. 151-163; N. Butler et al, "Ambient temperature solid state pyroelectric IR imaging arrays".
Infrared Phys. vol. 22, 1982, GB pp. 259-275; R. Watton et al: `The pyroelectric/CCD focal plane hybrid: Analysis and design for direct charge injection`.

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