Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Charge transfer device
Patent
1994-01-21
1995-01-31
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Charge transfer device
257187, 257189, 257233, 257239, 257258, 257279, H01L 2978, H01L 2714, H01L 3100
Patent
active
053861280
ABSTRACT:
A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.
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Cunningham Thomas J.
Fossum Eric R.
Krabach Timothy N.
Staller Craig O.
Jones Thomas H.
Kusmiss John H.
Miller Guy M.
Ngo Ngan V.
The United States of America as represented by the Administrator
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