Monolithic impedance matched cascade amplifier

Details Monolithic impedance matched cascade amplifier Monolithic impedance matched cascade amplifier

1984-06-01

1986-01-14

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including distributed parameter-type coupling

330277, 330 54, H03F 360

Patent

active

045648174

ABSTRACT:
An integrated amplifier circuit for monolithic fabrication is disclosed. circuit includes a plurality of amplifier stages between an input transmission line and an output transmission line. Each stage includes a FET formed on the surface of a semi-insulating substrate such as gallium arsenide (GaAs). The gate of each FET is connected to the input transmission line, while the drain is connected to the output transmission line. The source is connected through the semi-insulating substrate to a conductive layer. A received signal propagates as a traveling wave along the input transmission line, and is amplified by each of the FETs. The phase delay between the gates is the same as that between the drains, so that the amplified signal adds constructively on the output transmission line. Each of the transmission lines is terminated in its own characteristic impedance, which may be equal to the load.

REFERENCES:
patent: 4486719 (1984-12-01), Ayasli

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