Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1992-06-18
1995-04-25
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257446, 257514, 257517, H01L 2714
Patent
active
054101751
ABSTRACT:
This invention relates to a monolithic IC having a PIN photodiode and an n-p-n bipolar transistor formed on a single semiconductor (silicon) substrate. In fabricating such IC, it is important to electrically isolate the photodiode and the bipolar transistor. In addition it is necessary to make the surface of the substrate flat. According to this invention, the inter-device isolation between the above-described two devices is attained by forming two epitaxial layers on the silicon substrate, forming trenches in the layers, and burying silicon dioxide in the trenches. In the monolithic IC according to this invention wiring capacity is small, and high-speed performance becomes possible. A p-type buried-layer is formed below the bipolar transistor to thereby prevent punch through between the bipolar transistor and other devices. Also this invention provides the process for fabricating a planar type bipolar transistor suitable to fabricate the monolithic IC and also provides a PIN photodiode of a new structure.
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patent: 5086326 (1992-02-01), Shinohara et al.
patent: 5107320 (1992-04-01), Iranmanesh
Cheng et al., "Monolithically Integrated Receiver Front End: In.sub.0.53 Ga.sub.0.47 As p-i-n Amplifier," IEEE Transactions on Electron Devices, vol. 35, No. 9, Sep. 1988.
Kyomasu Mikio
Nakamura Hiroyasu
Okajima Ken'ichi
Sahara Masanori
Bowers Courtney A.
Hamamatsu Photonics K.K.
James Andrew J.
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