Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1980-11-26
1982-08-17
Ozaki, G.
Metal working
Method of mechanical manufacture
Assembling or joining
29591, 204 15, 204192SP, H01L 2118
Patent
active
043442234
ABSTRACT:
A method of fabricating a thin film semiconductor hybrid circuit is disclosed. After processing of the integrated circuit in the semiconductor wafer up to the point of establishing ohmic contacts (14) to devices (13), a thin film RC circuit is fabricated on an insulating layer (11,12) overlying the wafer. This is accomplished by first forming the capacitor anodes (15') on the insulator by depositing and etching a layer such as alpha tantalum. Resistors (16) are then formed by depositing and etching a layer such as tantalum nitride. Portions of the capacitor anodes are then anodized using an appropriate mask (17) to form the capacitor dielectric. Capacitor counterelectrodes (20') and interconnect conductors (20'") are formed by depositing and etching successive layers of metal such as nickel-chromium and gold. After all thin film components are formed, the resistors and capacitors are stabilized by heating the circuit in an atmosphere comprising high pressure steam.
REFERENCES:
patent: 3430334 (1969-03-01), Douta et al.
patent: 3607679 (1971-09-01), Melroy et al.
patent: 3616282 (1971-10-01), Bodway
patent: 3718565 (1973-02-01), Pelletier
patent: 3988824 (1976-11-01), Bodway
patent: 3997411 (1976-12-01), Muenz
patent: 4251326 (1981-02-01), Arcidiacono et al.
Bulger Gary A.
Heck Lyle D.
Huttemann Robert D.
Morabito Joseph M.
Pitetti Raymond C.
Bell Telephone Laboratories Incorporated
Birnbaum Lester H.
Ozaki G.
Western Electric Company Inc.
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