Monolithic high voltage nonlinear transmission line fabrication

Fishing – trapping – and vermin destroying

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437107, 437126, 437133, 437128, 437129, 333 20, 257274, 257480, H01L 21203

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active

053526279

ABSTRACT:
A process for fabricating sequential inductors and varactor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varactor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process.

REFERENCES:
patent: 4126928 (1979-01-01), Logan et al.
patent: 4956568 (1990-09-01), Su et al.
patent: 5014018 (1991-05-01), Rodwell et al.
patent: 5214318 (1993-05-01), Nakanishi et al.
patent: 5254492 (1993-10-01), Tserng et al.
patent: 5256996 (1993-10-01), Marsland et al.
patent: 5278444 (1994-01-01), Lieneweg et al.

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