Monolithic high Q varactor circuit

Details Monolithic high Q varactor circuit Monolithic high Q varactor circuit

1986-12-29

1988-04-26

Miller, Stanley D.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

307322, 307258, 333213, H03J 320, H03K 326

Patent

active

047407166

ABSTRACT:
An active element behaving as a negative resistor is situated in parallel with a varactor to cancel the varactor losses. DC bias is provided for the active element and for the varactor which are separated by a DC block. The entire circuit can be fabricated on a single, relatively small chip. A Gunn diode may be used as the active element if the circuit is formed on a silicon substrate. A field effect transistor may be used as the active element on a gallium arsenide substrate.

REFERENCES:
patent: 3221181 (1965-11-01), Kiyasu et al.
patent: 3458715 (1969-07-01), Hartman
patent: 4430630 (1984-02-01), Sakamoto

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