Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1995-05-01
1996-11-26
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257362, 257368, 257529, H01L 2362, H01L 2976, H01L 2900
Patent
active
055788602
ABSTRACT:
A high frequency power FET device (22) is integrated with passive components (23,24,26,28,31), an electro-static discharge (ESD) device (27,127,227), and/or a logic structure (29) on a semiconductor body (13) to form a monolithic high frequency integrated circuit structure (10). The high frequency power FET device (22) includes a grounded source configuration. The logic structure (29) utilizes the high frequency power FET structure in a grounded source configuration as one device in a CMOS implementation.
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Burger Wayne R.
Camilleri Natalino
Costa Julio C.
Dragon Christopher P.
Lamey Daniel J.
Jackson Kevin B.
Martin Wallace Valencia
Motorola Inc.
Saadat Mahshid
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