Monolithic high frequency integrated circuit structure having a

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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257362, 257368, 257529, H01L 2362, H01L 2976, H01L 2900

Patent

active

055788602

ABSTRACT:
A high frequency power FET device (22) is integrated with passive components (23,24,26,28,31), an electro-static discharge (ESD) device (27,127,227), and/or a logic structure (29) on a semiconductor body (13) to form a monolithic high frequency integrated circuit structure (10). The high frequency power FET device (22) includes a grounded source configuration. The logic structure (29) utilizes the high frequency power FET structure in a grounded source configuration as one device in a CMOS implementation.

REFERENCES:
patent: 4930036 (1990-05-01), Sitch
patent: 4969032 (1990-11-01), Scheitlin et al.
patent: 5021859 (1991-06-01), Ito et al.
patent: 5041889 (1991-08-01), Kriedt et al.
patent: 5119162 (1992-06-01), Todd et al.
patent: 5155563 (1992-10-01), Davies et al.
patent: 5166639 (1992-11-01), Green et al.
patent: 5242841 (1993-09-01), Smayling et al.
patent: 5317180 (1994-05-01), Hutter et al.
patent: 5359211 (1994-10-01), Croft
IBM Technical Disclosure Bulletin, Programmable Substrate Inductor, vol. 32, No. 6B, Nov. 1989, pp. 310-316.

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