Monolithic high density arrays of independently addressable offs

Details Monolithic high density arrays of independently addressable offs Monolithic high density arrays of independently addressable offs

1990-02-21

1990-12-25

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 46, 372 23, 372 97, 372 45, 346168, H01S 319

Patent

active

049808931

ABSTRACT:
Monolithic high density arrays of independently addressable offset semiconductor laser emitters or elements are able to be placed in close center-to-center proximity, e.g., on 3-10 .mu.m centers, without experiencing any undesirable phase locking and with minimal amount of electrical and thermal interaction or crosstalk occurring between the independently addressed lasing elements and their independent operation in ROS printer applications. With a proper offset in the laser emitters, interlace scanning relative to an image bearing surface, which is required with other multiple emitter lasers in ROS printer applications, is eliminated thereby permitting adjacent line scanning of an image bearing surface without complicated optics and electronics.

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patent: 4706255 (1987-11-01), Thornton et al.
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patent: 4796964 (1989-01-01), Connell et al.
Y. Tokuda et al., "Dual Wavelength Emission from a Twin Stripe Single Quantum Well Laser", Applied Physics Letters, vol. 51(21), pp. 1664-1666, Nov. 23, 1987.

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