Monolithic, fully dense silicon carbide mirror and method of man

Details Monolithic, fully dense silicon carbide mirror and method of man Monolithic, fully dense silicon carbide mirror and method of man

1993-03-11

1994-04-12

Klemanski, Helene

Compositions: ceramic

Ceramic compositions

Carbide or oxycarbide containing

501 88, 501 90, 501 93, C04B 3556

Patent

active

053025610

ABSTRACT:
A new silicon carbide material is made following a procedure including hot pressing to provide a finished product having a microstructure with an optimal grain size of less than 7 micrometers. The material exhibits a dominant failure mode of intergranular fracture requiring significant energy for crack propagation. The method of manufacturing is cost-effective by allowing the use of "dirty" raw materials since the process causes impurities to segregate at multi-grain boundary junctions to form isolated pockets of impurities which do not affect the structural integrity of the material. End uses include use as optical and electronic substrate materials.

REFERENCES:
patent: 5192719 (1993-03-01), Yamauchi et al.

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