Monolithic, fully dense silicon carbide material, method of manu

Details Monolithic, fully dense silicon carbide material, method of manu Monolithic, fully dense silicon carbide material, method of manu

1993-09-03

1994-10-11

Walsh, Donald P.

Powder metallurgy processes

Powder metallurgy processes with heating or sintering

Heat and pressure simultaneously to effect sintering

419 10, 419 16, 419 25, 419 13, 419 36, 419 51, B22F 314

Patent

active

053545362

ABSTRACT:
A silicon carbide material is made following a procedure including hot pressing to provide a finished product having a microstructure with an optimal grain size of less than 7 micrometers. The material exhibits a dominant failure mode of intergranular fracture requiring significant energy for crack propagation. The method of manufacturing is cost-effective by allowing the use of "dirty" raw materials since the process causes impurities to segregate at multi-grain boundary junctions to form isolated pockets of impurities which do not affect the structural integrity of the material. End uses include use as protective projectile-resistant armor.

REFERENCES:
patent: 3853566 (1974-12-01), Prochazka
patent: 3960577 (1976-06-01), Prochazka
patent: 3966855 (1976-06-01), Hollenberg et al.
patent: 4108929 (1978-08-01), Prochazka et al.
patent: 4326039 (1982-04-01), Kriegesmann et al.
patent: 4332755 (1982-06-01), Murata
patent: 4467043 (1984-08-01), Kriegesmann et al.
patent: 4496503 (1985-01-01), Ezis et al.
patent: 4569922 (1986-02-01), Suzuki
patent: 4692418 (1987-09-01), Boecker et al.
patent: 4693988 (1987-09-01), Boecker et al.
patent: 4753903 (1988-06-01), Saito
patent: 4855263 (1989-08-01), Kawasaki et al.
patent: 4874725 (1989-10-01), Furukawa et al.
patent: 4876941 (1989-10-01), Barnes et al.
patent: 4963516 (1990-10-01), Kawasaki
patent: 5032550 (1991-07-01), Derkacy
patent: 5182059 (1993-01-01), Kawasaki et al.

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