Monolithic, fully dense silicon carbide material, method of manu

Details Monolithic, fully dense silicon carbide material, method of manu Monolithic, fully dense silicon carbide material, method of manu

1993-03-11

1994-12-13

Group, Karl

Compositions: ceramic

Ceramic compositions

Carbide or oxycarbide containing

501 88, 501 93, C04B 3556

Patent

active

053729781

ABSTRACT:
A new silicon carbide material is made following a procedure including hot pressing to provide a finished product having a microstructure with an optimal grain size of less than 7 micrometers. The material exhibits a dominant failure mode of intergranular fracture requiring significant energy for crack propagation. The method of manufacturing is cost-effective by allowing the use of "dirty" raw materials since the process causes impurities to segregate at multi-grain boundary junctions to form isolated pockets of impurities which do not affect the structural integrity of the material. End uses include use as protective projectile-resistant armor.

REFERENCES:
patent: 4670408 (1987-06-01), Petzow et al.
patent: 5192719 (1993-03-01), Yamauchi et al.

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