Monolithic extrinsic silicon infrared detectors with charge coup

Details Monolithic extrinsic silicon infrared detectors with charge coup Monolithic extrinsic silicon infrared detectors with charge coup

1975-09-17

1980-02-26

Buczinski, S. C.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307304, 307311, 357 24, 250338, 250340, H01L 2714, H01L 3100

Patent

active

041908511

ABSTRACT:
There is disclosed an all silicon monolithic focal plane array of infrared detectors for image detection. The structure comprises an epitaxial layer grown from an extrinsicly doped silicon substrate. The detectors are formed in and extend through the substrate the material of which is sensitive to specific wavelength infrared signals according to the dopant used in the substrate. The signal readout function is performed by a charge coupled device shift register constructed in the epitaxial layer by separating electrodes from it in an insulating layer formed on it. Carriers generated in the detecor by incident infrared radiation are directly injected into the CCD shift register and detected at the output end. The monolithic construction and the use of an epitaxial layer to form the CCD shift register results in low cost, high yield and high efficiency devices.

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patent: 3849651 (1974-11-01), Ennulat
patent: 3883437 (1975-05-01), Nummedal et al.
patent: 3896474 (1975-07-01), Amelio et al.
patent: 3896485 (1975-07-01), Early
patent: 3902066 (1975-08-01), Roosilo et al.

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