Monolithic diode assay

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation

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257601, H01L 27082

Patent

active

055593615

ABSTRACT:
A semiconductor component is formed in a semiconductor wafer, of a first conductivity type. The semiconductor component includes a plurality of first regions, of a second conductivity type, in a top surface of the wafer and coated with a first metallization layer. The semiconductor component further includes a second region, of the second conductivity type, and a third region, of the first conductivity type, each formed in the top surface of the wafer. A second metallization layer coats the second and third regions. A fourth region, of the first conductivity type, is formed in a bottom surface of the semiconductor wafer and opposes the first and second regions. A fifth region, of the second conductivity type, is also formed in the bottom surface and opposes the third region. A rear surface metallization covers the bottom surface of the semiconductor wafer.

REFERENCES:
patent: 5081514 (1992-01-01), Ueoka
patent: 5338964 (1994-08-01), Bernier

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