Amplifiers – With semiconductor amplifying device – Including current mirror amplifier
Reexamination Certificate
1999-05-19
2001-06-19
Mottola, Steven J. (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including current mirror amplifier
C330S267000
Reexamination Certificate
active
06249187
ABSTRACT:
TECHNICAL FIELD OF THE INVENTION
This invention relates in general to the field of electronic systems, and more particularly to an improved monolithic CRT video power amplifier system.
BACKGROUND OF THE INVENTION
Conventional circuits used to power the cathodes of the electron guns for video displays such as CRTs or monitors are typically formed from discrete transistors and components due to the large voltages and power dissipations inherent in the operation of these systems. Component mismatches make these systems difficult to replicate on a cost-effective basis. In addition, discrete systems increase the component count of the overall system and thereby increase both the manufacturing cost and the size of the system.
Some hybrid systems have been developed where certain portions of the video amplifier system are placed on integrated devices. However, circuit designs have been unable to integrate the complete system due to the design of the amplifiers used in the systems. This is due to the fact that the large voltages necessary to operate the cathode of the electron guns create situations where portions of the amplifier are required to dissipate large amounts of power. In some implementations, these points in the circuit comprise large resistors, which due to the required heat dissipation of the components are incapable of being integrated with the remainder of the power of the video amplifier system.
Accordingly, a need has arisen for a video amplifier system that integrates a larger number of the components required to drive the cathodes of the electron guns in video system.
SUMMARY OF THE INVENTION
In accordance with the teachings of the present invention, a monolithic video power amplifier system is provided that substantially eliminates or reduces disadvantages associated with prior systems.
According to one embodiment of the present invention, a system is provided that comprises a biasing network, a transconductance amplifier and a transimpedance amplifier constructed in a single semiconductor layer. The transimpedance amplifier utilizes pull-up and pull-down transistors and a multistage current mirror amplifier architecture to enable the output of a voltage sufficient to drive the cathode of an electron gun from a fully integrated device.
REFERENCES:
patent: 5399991 (1995-03-01), Moraveji
patent: 5789980 (1998-08-01), Nagata et al.
Chou Chung-Ming
Tang William Y. W.
Tsong Danny
Brady III W. James
Hernandez Pedro P.
Mottola Steven J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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