Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Patent
1997-07-17
1999-11-09
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
257122, 257124, 257162, 257500, H01L 2974, H01L 2996
Patent
active
059820160
ABSTRACT:
A monolithic component including, in an N-type lightly-doped substrate of a semiconductor wafer, two portions separated by a P-type insulating wall. A first portion of the two portions includes a high voltage lateral component, a layer of which substantially corresponds to the thickness of the wafer. The second portion includes logic circuit components. A rear surface of the substrate includes a P-type layer coated with a metallization. The insulating wall is in electrical contact with a low voltage terminal of the high voltage lateral component, such as the gate region of a thyristor. The logic portion includes at least one vertical component.
REFERENCES:
patent: 4475280 (1984-10-01), Ragonese et al.
patent: 4520277 (1985-05-01), Hahn
patent: 4546370 (1985-10-01), Curran
patent: 5608235 (1997-03-01), Pezzani
French Search Report from French Patent Application 96 09682, filed Jul. 26, 1996.
Patent Abstracts of Japan, vol. 005, No. 027 (E-046), Feb. 18, 1981 & JP-A-55 154764 (Mitsubishi Electric Corp.).
Patent Abstracts of Japan, vol. 014, No. 190 (E-0918), Apr. 18, 1990 & JP-A-02 039470 (Matsushita Electron Corp.).
Bernier Eric
Pezzani Robert
Baumeister Bradley William
Jackson, Jr. Jerome
SGS-Thomson Microelectronics S.A.
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