Measuring and testing – Gas analysis – Moisture content or vapor pressure
Patent
1978-03-22
1979-08-28
Swisher, S. Clement
Measuring and testing
Gas analysis
Moisture content or vapor pressure
G01K 700
Patent
active
041656423
ABSTRACT:
A monolithic integrated complementary metal oxide semiconductor (CMOS) circuit senses internal junction temperature and converts it to a binary coded decimal output signal. The circuit compares a temperature dependent junction voltage with a bandgap reference voltage controlled by a very stable amplifier. The comparison differential is then converted to a binary coded decimal output signal by an analog to digital converter. The circuit utilizes parasitic bipolar NPN transistor elements formed from a substrate of the chip in a conventional CMOS fabrication process. The principles of the present invention are also broadly applicable to other semiconductor technologies such as integrated injection logic (I.sup.2 L).
REFERENCES:
patent: 3809929 (1974-05-01), Vittoz
patent: 3873857 (1975-03-01), Farrish
patent: 4085359 (1978-04-01), Ahmed
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