Amplifiers – With semiconductor amplifying device – Including push-pull amplifier
Patent
1998-02-20
1999-10-05
Pascal, Robert
Amplifiers
With semiconductor amplifying device
Including push-pull amplifier
330265, H03F 318, H03F 326
Patent
active
059630949
ABSTRACT:
A monolithic class AB (push-pull) low noise amplifier having feedback and self bias. The low noise amplifier exhibits low power, high intercept point, low noise figure, well matched terminal impedances over wide range of frequency, and may be monolithically implemented. The amplifier may be produced using CMOS process technologies. The amplifier comprises NMOS and PMOS transistors serially coupled between a voltage rail and ground. The amplifier uses self biasing embodied in a bias resistor coupled between an input shunt capacitor and respective drains of the NMOS and PMOS transistors, which allows for maximum gate-to-source voltage and higher transconductance for a minimum aspect ratio (W/L). This results in a wider bandwidth and reduced power for the amplifier. The use of a shunt--shunt feedback network comprising a shunt resistor and a serially coupled shunt capacitor coupled between respective gates and drains of the NMOS and PMOS transistors, provides better terminal impedance matching over wide bandwidth.
REFERENCES:
patent: 4087760 (1978-05-01), Yokoyama
patent: 4353036 (1982-10-01), Hoover
Linder Lloyd F.
Tran Kelvin T.
Alkov Leonard A.
Lenzen, Jr. Glenn H.
Nguyen Patricia T.
Pascal Robert
Raytheon Company
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