Monolithic circuit fabrication method

Details Monolithic circuit fabrication method Monolithic circuit fabrication method

1993-11-10

1994-11-08

Heinrich, Samuel M.

Metal fusion bonding

Process

Metal to nonmetal with separate metallic filler

228208, 228254, 427 96, 427124, 427282, 118721, 118504, 437221, 437245, H01L 2152

Patent

active

053619676

ABSTRACT:
A monolithic circuit, such as a piezoelectric device, semiconductor, or the like, may be fabricated by forming an operational metallization layer (12) on a substrate (10). A subsequent layer (40), such as a sealing ring pattern (42) may then be applied using a thin film deposition technique. A thin film material is applied through a mask assembly (28). The mask assembly (28) includes a mask material (30) that has been applied to a screen (24) and patterned as desired. The mask material (30) extends beyond the screen (24) so that only the mask material contacts the substrate (10) during thin film deposition. Preferably, the screen (24) is woven from individual wires (26) having circular cross-sectional shapes. The subsequent layer (40) is applied both through perforations (18) in the screen (24) and under the screen's wires (26).

REFERENCES:
patent: 3895155 (1975-07-01), Shukuri et al.
patent: 4013502 (1977-03-01), Staples
patent: 4404755 (1983-09-01), Resneau et al.
patent: 4434544 (1984-03-01), Dohya et al.
patent: 4582395 (1986-04-01), Morozumi
patent: 4904555 (1990-02-01), Grossa
Selected pages from a catalog Micro-Screen Precision Products, A Division of Syscon International, Inc. 1108 S. High Street, South Bend, Ind. 46618, (219) 232-3900, (800) 348-2993 with an article entitled Viano's CDF Direct-Film System from CDF Family Bulletin, vol. 986.

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