Monolithic bidirectional switch with power MOS transistors

Details Monolithic bidirectional switch with power MOS transistors Monolithic bidirectional switch with power MOS transistors

1989-08-30

1991-03-26

Stephan, Steven L.

Electricity: power supply or regulation systems

External or operator controlled

Using a three or more terminal semiconductive device as the...

307570, 307571, 307585, H03K 17687, G05F 144

Patent

active

050032461

ABSTRACT:
A single-chip solid-state bidirectional switch comprises two power MOS transistors (TP1, TP2) connected by their drains (D1, D2), and the sources of which (S1, S2) constitute the main terminals (A1, A2) of the switch; two auxiliary MOS transistors (T1, T2) each of which is connected by its main terminals between the source and the gate of each power transistor, the gates of those auxiliary MOS transistors being connected to the common drain of the power transistors; and two high-value resistors (R1, R2), respectively connected between the gate (G1, G2) of each power transistor and the control terminal (G) of the solid-state switch.

REFERENCES:
patent: 3740581 (1973-06-01), Pfiffner
patent: 4480201 (1984-10-01), Jaeschke
patent: 4591734 (1986-05-01), Laughton
patent: 4649302 (1987-03-01), Damiano et al.
patent: 4686383 (1987-08-01), Croft
patent: 4888504 (1989-12-01), Kinzer

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