Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1983-11-21
1986-03-25
Edlow, Martin H.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 51, 307296A, 307296R, 307351, 361 91, H01L 2704, H02H 904, H03K 301, H03K 5153
Patent
active
045786950
ABSTRACT:
A monolithically integrated resistive attenuator is autobiased from an input bipolar signal the amplitude of which is higher than the integrated circuit voltage supplies. The resistive attenuator is arranged in a first pocket formed in an epitaxial layer, and is connected between the input bipolar signal and ground. An intermediate tap produces an output signal. A diode and capacitor are formed in a second pocket. The diode is connected between the input bipolar signals and the epitaxial layer while the capacitor is connected between the epitaxial layer and the isolation walls thereof. The positive half-periods of the input bipolar signal charges the capacitor, which in turn biases the epitaxial layers. The attenuator, therefore, can be monolithically integrated into a silicon chip and remain isolated for all values of the input bipolar signal. The output signal produced by the attenuator is less than the integrated circuit voltage supplies so that the circuits driven by the output signal can be integrated without difficulties.
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Delaporte Francois-Xavier
Lebesnerais Gerard M.
Pantani Jean-Pierre
Bigel Mitchell S.
DeBruin Wesley
Edlow Martin H.
Fallick E.
International Business Machines - Corporation
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