Monolithic assembly of an IGBT transistor and a fast diode

Details Monolithic assembly of an IGBT transistor and a fast diode Monolithic assembly of an IGBT transistor and a fast diode

1997-07-25

2000-02-29

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With switching speed enhancement means

257146, 257140, 257341, 257476, H01L 2974, H01L 29732, H01L 29872

Patent

active

060312548

ABSTRACT:
The present invention relates to a monolithic assembly of a vertical IGBT transistor and a vertical fast diode connected to the drain of the IGBT transistor, implemented in an N-type semiconductor substrate. The rear (or lower) surface of the structure is uniformly formed of a P-type layer having many openings through which the N-type substrate appears. This rear surface is covered with a material for establishing a Schottky contact with the substrate and an ohmic contact with the P-type layer.

REFERENCES:
patent: 3328651 (1967-06-01), Miller
patent: 5072312 (1991-12-01), Schwarzbauer
patent: 5183769 (1993-02-01), Rutter et al.
patent: 5273917 (1993-12-01), Sakurai
patent: 5338961 (1994-08-01), Lidow
French Search Report from French Patent Application 96 09680, filed Jul. 26, 1996.

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