Monolithic array amplifier with periodic bias-line bypassing...

Details Monolithic array amplifier with periodic bias-line bypassing... Monolithic array amplifier with periodic bias-line bypassing...

2006-04-25

2006-04-25

Choe, Henry (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including plural amplifier channels

C330S12400D

Reexamination Certificate

active

07034619

ABSTRACT:
A bias-line bypassing structure comprises a plurality of bias-line bypass circuits forming a periodic structure at least partially around each of a plurality of amplification units to reduce RF current flow between the amplification units and a grid-bias network. Each bias-line bypass circuit may comprise thin-film capacitors, inductive wire bridges, and thin-film resistors connected to ground vias. The thin-film capacitors may have differing values selected to resonate with an associated one of the inductive wire bridges and an associated one of the thin-film resistors to shunt RF current flow over a range of RF frequencies. In some embodiments, the inductive wire bridges may comprise inductive wire-bridge fuses to provide an open circuit in case an associated one the thin-film capacitors shorts to ground. The bias-line bypass circuits may be positioned along a bias street of the grid-bias network and spaced apart by less than a quarter-wavelength of an effective propagation constant of the bias line.

REFERENCES:
patent: 4074151 (1978-02-01), Buckley et al.
patent: 4553053 (1985-11-01), Ong et al.
patent: 4631493 (1986-12-01), Vendelin et al.
patent: 6081160 (2000-06-01), Custer et al.
patent: 6137377 (2000-10-01), Wallace et al.
patent: 6177841 (2001-01-01), Ohta et al.
patent: 6300835 (2001-10-01), Seely et al.

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