Monocrystalline three-dimensional integrated circuit

Details Monocrystalline three-dimensional integrated circuit Monocrystalline three-dimensional integrated circuit

1986-05-12

1989-12-05

Hille, Rolf

357 41, 357 44, 357 49, H01L 2980, H01L 2702, H01L 2712

Patent

active

048856150

ABSTRACT:
A single-crystal monolith containing a 3-D doping pattern forming varied devices and circuits that are junction-isolated. The semiconductor monolith includes interconnecting signal paths and power buses, also junction-isolated, usually with N+ regions within P matrix regions, and tunnel junctions, N+ - P+ junctions, as ohmic contacts from N-type to P-type regions. An isolating box incorporates an orthogonal isolator. The 3-D structure places layers of critical profile normal to the growth axis. The orthogonal isolator can include floating elements. The 3-D semiconductor monolith can be manufactured through continuous or quasicontinuous processing in a closed system, such as through MBE or sputter epitaxy. Also, a thin layer of silicide can be provided as an ohmic contact and/or a thick layer of silicide can be provided as a conductor thereby providing monocrystalline 3-D devices or integrated circuits. Finally, an insulator can be provided about an entire device for isolation.

REFERENCES:
patent: 4412239 (1983-10-01), Iwasaki et al.
patent: 4500905 (1985-02-01), Shibata
patent: 4638344 (1987-01-01), Cardwell, Jr.

Affiliated with

Also associated with

Rating

Monocrystalline three-dimensional integrated circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Monocrystalline three-dimensional integrated circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Monocrystalline three-dimensional integrated circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2037407