Monocrystalline silicon wafer and method of thermally oxidizing

Details Monocrystalline silicon wafer and method of thermally oxidizing Monocrystalline silicon wafer and method of thermally oxidizing

1996-02-01

1999-07-27

Speer, Timothy M.

Stock material or miscellaneous articles

Surface property or characteristic of web, sheet or block

428426, 428428, 428446, 428700, B32B 900

Patent

active

059287861

ABSTRACT:
A monocrystalline silicon wafer is improved so as not to cause enhanced oxidation at the time of forming a gate oxide film. The monocrystalline silicon wafer includes a monocrystalline silicon substrate. The monocrystalline silicon substrate has potassium concentration of at most 2.times.10.sup.11 atoms/cm.sup.2 at an outer surface thereof.

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