Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1994-07-20
1996-07-30
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257 76, 257 78, 257 79, 257 80, 257 82, H01L 310312, H01L 2922, H01L 27155
Patent
active
055414230
ABSTRACT:
A diamond semiconductor device has a pn junction formed by a p-type diamond semiconductor portion containing boron as an impurity and an n-type diamond semiconductor portion containing lithium as an impurity. The diamond semiconductor is formed by a diamond crystal growth on a single nucleation site on an insulating substrate. Electroluminescene takes place in the diamond crystal.
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Jap. J. Appl. Phys. vol. 28, No. 10, Oct. 1989, pp. L1848-L1850, Taniguchi et al. "Blue Electroluminescence of Thin-Film Diamond etc."5
Fitzpatrick, Cella, Harper & Scinto
Canon Kabushiki Kaisha
Crane Sara W.
Martin Wallace Valencia
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