Monocrystalline diamond semiconductor device and several electro

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide

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257 76, 257 78, 257 79, 257 80, 257 82, H01L 310312, H01L 2922, H01L 27155

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active

055414230

ABSTRACT:
A diamond semiconductor device has a pn junction formed by a p-type diamond semiconductor portion containing boron as an impurity and an n-type diamond semiconductor portion containing lithium as an impurity. The diamond semiconductor is formed by a diamond crystal growth on a single nucleation site on an insulating substrate. Electroluminescene takes place in the diamond crystal.

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Jap. J. Appl. Phys. vol. 28, No. 10, Oct. 1989, pp. L1848-L1850, Taniguchi et al. "Blue Electroluminescence of Thin-Film Diamond etc."5
Fitzpatrick, Cella, Harper & Scinto

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