Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
Reexamination Certificate
2004-05-03
2008-07-08
Hiteshew, Felisa (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having growth from a solution comprising a solvent which is...
C117S075000
Reexamination Certificate
active
07396408
ABSTRACT:
This invention relates to a method for the production of diamond films with low misorientation through the deposition of diamond on a film system, whereby the film system exhibits a substrate film made of monocrystalline silicon or silicon carbide, at least one buffer film arranged on that, and at least one metal film made of a refractory metal arranged on that, whereby the diamond is deposited on the at least one metal film.
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PCT International Search Report for PCT/EP2004/004678 completed by the EP Searching Authority on Jul. 29, 2004.
Gsell Stefan
Schreck Matthias
Stritzker Bernd
Barnes & Thornburg LLP
Hiteshew Felisa
Universität Augsburg
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