Monocrystalline compound semiconductor wafer including non-monoc

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...

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257631, 437248, H01L 21477, H01L 2912

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active

056775652

ABSTRACT:
A method of fabricating a semiconductor wafer includes preparing a semiconductor wafer of a monocrystalline compound semiconductor having a side surface and upper and lower surfaces, and upper and lower corners at the intersections of the side surface and the upper and lower surfaces, respectively; and producing a non-monocrystalline region at the side surface of the semiconductor wafer including the corners. Since the semiconductor wafer includes a non-monocrystalline part at the side surface including the corners, even when a crack is produced in the non-monocrystalline part, unwanted cleaving of the wafer from the crack does not occur.

REFERENCES:
patent: 3607466 (1971-09-01), Miyazaki
patent: 4628016 (1986-12-01), Yamaguchi
patent: 5173127 (1992-12-01), Shimakura et al.
patent: 5317186 (1994-05-01), Wills et al.
"Newest Compound Semiconductor Handbook" published by Science Forum, 1992. pp. 80-89.
"Laser Processing" , published by Nikkei Gijutsu Tosho, 1990. pp. 484-487, 290-293.

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