Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Patent
1995-11-15
1997-10-14
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
257631, 437248, H01L 21477, H01L 2912
Patent
active
056775652
ABSTRACT:
A method of fabricating a semiconductor wafer includes preparing a semiconductor wafer of a monocrystalline compound semiconductor having a side surface and upper and lower surfaces, and upper and lower corners at the intersections of the side surface and the upper and lower surfaces, respectively; and producing a non-monocrystalline region at the side surface of the semiconductor wafer including the corners. Since the semiconductor wafer includes a non-monocrystalline part at the side surface including the corners, even when a crack is produced in the non-monocrystalline part, unwanted cleaving of the wafer from the crack does not occur.
REFERENCES:
patent: 3607466 (1971-09-01), Miyazaki
patent: 4628016 (1986-12-01), Yamaguchi
patent: 5173127 (1992-12-01), Shimakura et al.
patent: 5317186 (1994-05-01), Wills et al.
"Newest Compound Semiconductor Handbook" published by Science Forum, 1992. pp. 80-89.
"Laser Processing" , published by Nikkei Gijutsu Tosho, 1990. pp. 484-487, 290-293.
Brown Peter Toby
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
Monocrystalline compound semiconductor wafer including non-monoc does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Monocrystalline compound semiconductor wafer including non-monoc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Monocrystalline compound semiconductor wafer including non-monoc will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1557351