Monocrystal rod pulled from a melt

Details Monocrystal rod pulled from a melt Monocrystal rod pulled from a melt

1990-08-16

1992-12-22

Kunemund, Robert

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

1566164, 1566171, 1566203, 156DIG44, 156DIG98, B01D 900

Patent

active

051732700

ABSTRACT:
A monocrystal rod utilized for producing the semiconductor device or solar cell includes a neck section, a main rod section and a shoulder section. The neck section is smaller in diameter than a seed crystal. The main rod section is formed integrally with the neck section and is larger in diameter than the neck section. The shoulder section is tapered for linking the neck section to the main rod section. The main rod section has a stopper section at the top portion of the main rod section, and the stopper section is larger than the main rod section.
Also, an apparatus for preparing the monocrystal rod has a safety member for supporting upwards the stopper section of the falling monocrystal rod.
Further, a method of preparing the monocrystal rod includes the steps as follows. The seed crystal is pulled out from a melt in a crucible while rotating it. The speed of pulling the seed crystal is at first increased to grow the neck section whose diameter is smaller than the seed crystal, and then is gradually decreased to grow the shoulder section. Subsequently, the pulling speed is increased again so as to prevent further increase in diameter to grow the stopper section at the lower end of the shoulder section or at the top portion of the main rod section, and then is decreased again to grow the main rod section whose diameter is equal to a required diameter.

REFERENCES:
patent: 2979386 (1961-04-01), Shockley et al.
patent: 4097329 (1978-06-01), Stock et al.
patent: 4289572 (1981-09-01), Sawyer et al.
patent: 4301120 (1981-11-01), Sibley
patent: 4417943 (1983-11-01), Jacques et al.
Method for the Zone Melting of a Crystalline Rod Without Using a Crusible; Keller; Siemens AG; Feb. 12, 1970.
Extended Abstracts, vol. 82-1, May 1982, pp. 303-304, No. 191, Pennington, N.J., US; K. M. Kim et al.: "Computer simulation and controlled growth of large diameter Czochralski silicon crystals".

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