Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2005-08-02
2005-08-02
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S004000, C257S627000, C438S105000, C117S003000, C117S902000, C117S929000
Reexamination Certificate
active
06924509
ABSTRACT:
Monoatomic and monocrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer.According to the invention, a monocrystalline substrate (2) is formed in SiC terminated by an atomic plane of carbon according to a reconstruction c(2×2) and at least one annealing is carried out, capable of transforming this atomic plane, which is a plane of dimers C≡C (4) of sp configuration, into a plane of dimers C—C (8) of sp3configuration. Application to microelectronics, optics, optoelectronics, micromechanics and biomaterials.
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Derycke Vincent
Dujardin Gérald
Mayne Andrew
Soukiassian Patrick
Centre National de la Recherche Scientifique
Commissariat a l''Energie Atomique
Crane Sara
Pearne & Gordon LLP
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