Monitoring the fabrication of semiconductor devices by photon in

Details Monitoring the fabrication of semiconductor devices by photon in Monitoring the fabrication of semiconductor devices by photon in

1988-10-28

1990-02-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 437 7, 437 8, 437225, 148DIG51, 156625, 156626, 156627, H01L 2100, H01L 2102, H01L 21306, B44C 122

Patent

active

049026313

ABSTRACT:
Gas phase processes such as plasma etching of a semiconductor substrate is monitored by utilizing the optogalvanic effect. The substrate is subjected to light and in response emits an electron current whose magnitude is representative of the composition at the surface of the substrate. The monitored current is a sensitive indication of surface contamination and of compositional changes associated with the gas phase procedure. The technique is effectively utilized in fabricating devices such as semiconductor devices.

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Situ Metho. for Plasma Electrode Surface Characterization, J. Appl. Phys. 63(11), 6/1/88, pp. 5280-5287.
Journal of Applied Physics, 63, 5280 (1988).

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