Monitoring semiconductor wafer defects below one nanometer

Details Monitoring semiconductor wafer defects below one nanometer Monitoring semiconductor wafer defects below one nanometer

2006-11-28

2006-11-28

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Nongaseous phase etching of substrate

With measuring, testing, or inspecting

C216S085000, C216S096000, C216S099000, C438S014000, C073S781000

Reexamination Certificate

active

07141179

ABSTRACT:
The invention describes a method to facilitate the use of low-sensitivity monitoring equipment for detecting and monitoring defects on the surface of semiconductor wafers. The method includes the use of a hydrofluoric acid solution for increasing the dimensions of a defect and the application of a thin-film layer of a metal, such as titanium, for improving the appearance of the defect such that the defect dimensions increase to above 0.1 nanometer, the detection threshold for economical low-sensitivity monitoring equipment.

REFERENCES:
patent: 5764353 (1998-06-01), Tate et al.
patent: 6048395 (2000-04-01), Iida et al.
patent: 6353222 (2002-03-01), Dotan
patent: 6777677 (2004-08-01), Nozoe et al.
patent: 2004/0025983 (2004-02-01), Morita et al.

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