Monitoring optical gain of semiconductor optical amplifier

Coherent light generators – Particular active media – Semiconductor

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372 31, 372 43, H01S 3133, H01S 3103

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active

053094697

ABSTRACT:
In this invention, a semiconductor device designed for use as an optical amplifier is provided with three sections; an input section, a middle section and an output section. A continuous optical waveguide extends through the input section, the middle section and the output section and the three sections are electrically isolated from each other. More specifically, a semiconductor laser amplifier is electrically split into three separate sections by implanting ions of, for example, hydrogen, helium or fluorine into the areas of the semiconductor amplifier which are between the middle section and the two end sections. The ion implantation provides a high degree of electrical isolation between the various sections, but it does not alter the continuity of the optical waveguide which passes through the three sections. In operation, each section is coupled to a bias source to forward bias the device, and the ratio of the voltages on the two end sections induced by the optical signal is proportional to the gain of the semiconductor amplifier.

REFERENCES:
patent: 4954786 (1990-10-01), Yamakawa et al.
"Two-Section Semiconductor Optical Amplifier Used as an Efficient Channel Dropping Node" C. Jorgensen, et al., IEEE Phot. Tech. Lett., vol. 4, No. 4, Apr. 1992, pp. 348-350.
"Strain-Compensated Strained-Layer Superlattices for 1.5 m Wavelength Lasers" B. I. Miller et al., Appl. Phys. Lett 59(18), May 6, 1991, pp. 1952-1954.
"Semi-Insulating Blocked Planar BH GainAsP/InP Laser With High Power and High Modulation Bandwidth" U. Koren et al., Electronics Lett, vol. 24, No. 3, Feb. 4, 1988, pp. 138-140.
"Traveling Wave Semiconductor Laser Amplifier Detectors," M. Gustavsson et al. J. Lightwave Technology, vol. 8, No. 4, Apr. 1990, pp. 610-617.

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