Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2008-02-26
2010-06-29
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
With measuring or testing
C257SE21521, C257SE21529
Reexamination Certificate
active
07745238
ABSTRACT:
A method of measuring temperature across wafers during semiconductor processing includes the step of providing a correlation between a peak wafer temperature during a processing step and a change in wafer surface charge or surface potential following the processing step. A first wafer to be characterized for its peak temperature spatial distribution during the processing step is processed through the processing step. The wafer surface charge or surface potential at a plurality of locations on the first wafer are measured following the processing step. A peak temperature spatial distribution for the first wafer is then determined based on the correlation and the wafer surface charge or surface potential measured in the measuring step.
REFERENCES:
patent: 6569691 (2003-05-01), Jastrzebski et al.
patent: 2008/0118424 (2008-05-01), Sadamitsu et al.
Matz Laura
Orozco-Teran Rosa A.
Ramappa Deepak A.
Brady III Wade J.
Franz Warren L.
Ghyka Alexander G
Mustapha Abdulfattah
Telecky , Jr. Frederick J.
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